SEMICONDUCTOR RADIATION EFFECTS TESTING AND VERIFICATION
From device to system,verify reliability undercumulative ionizing dose
X-ray total ionizing dose testing, biased irradiation, parameter monitoring, data interpretation and engineering reports for wafers, chips, power devices and electronic modules.
Contract testing first · response within four business hours · de-identify sensitive inquiries


System and sample concept visuals · final configuration is defined in controlled technical documents
TWO BUSINESS PATHS
Complete the verification—or build the capability in-house
Contract testing is the primary entry. AccuRad instruments and laboratory integration support teams that need continuing internal TID capability.
AccuRad TID-X systems
X-ray total ionizing dose systems integrating irradiation, dosimetry, device bias, parameter measurement, software and safety interlocks.
- Application-led configuration
- Coordinated instruments, fixtures and data
- Installation, training, acceptance and service

DEVICES AND APPLICATIONS
Build the verification path around the device question
X-ray TID addresses cumulative ionizing effects. It does not reproduce a complete space-radiation environment or replace SEE, neutron displacement, proton or heavy-ion testing.
Threshold voltage, leakage, conduction behavior and the coupling of radiation pre-stress with later electrical stress.
Explore application DIGITAL ICsFPGA, ASIC and SoCFunctional, interface, timing and operating-state evaluation across controlled dose and bias conditions.
Explore application MEMORY & SENSORSMemory, image sensors and PMICData retention, dark current, noise, output stability and parameter drift.
Explore application WAFERS & PROCESSWafers, die and process studiesSample-plane, measurement and data-boundary definition for process research and reliability evaluation.
Explore applicationTECHNICAL RESOURCES AND UPDATES
Engineering information—from test methods to device applications
Explore test variables, device response, instrument systems and service developments relevant to R&D and reliability decisions.

Why TID pre-stress may change the short-circuit failure path of a SiC MOSFET
Identify the coupled engineering questions created by gate bias, threshold shift and short-circuit stress.
Read the resource
Why bias conditions may change a TID conclusion at the same total dose
Turn DUT state, channels, actual values, duty cycle and checkpoints into controlled conditions.
Read the resource
Neutron transmutation doping and X-ray TID answer different questions
Separate NTD material processing, neutron effects and cumulative ionizing-dose evaluation.
Read the resourceUPDATES
Technical progress, application insight and product updates
PROJECT ENQUIRY
Start with what you need to verify
Share a non-sensitive device category, objective, target dose, bias conditions and schedule. The appropriate testing, instrument or service specialist will follow up with you.
- SELECTTesting, instruments or laboratory integration
- SUBMITA de-identified outline and contact details
- RESPONSEA specialist contacts you within four business hours
Do not send classified models, mission names, customer-controlled documents or export-controlled information through the public form.